Part Details for 2SC5658M3T5G by onsemi
Results Overview of 2SC5658M3T5G by onsemi
- Distributor Offerings: (16 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2SC5658M3T5G Information
2SC5658M3T5G by onsemi is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2SC5658M3T5G
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
50AC7735
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Newark | Bipolar Transistor, Npn, 50Vdc, Sot-723, Transistor Polarity:Npn, Collector Emitter Voltage V(Br)Ceo:50V, Transition Frequency Ft:180Mhz, Power Dissipation Pd:260Mw, Dc Collector Current:150Ma, Dc Current Gain Hfe:120Hfe, Transistor Rohs Compliant: Yes |Onsemi 2SC5658M3T5G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 575 |
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$0.0100 | Buy Now |
DISTI #
45J2516
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Newark | Npn Bipolar Transistor/ Reel Rohs Compliant: Yes |Onsemi 2SC5658M3T5G RoHS: Compliant Min Qty: 16000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.0210 / $0.0300 | Buy Now |
DISTI #
2SC5658M3T5GOSCT-ND
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DigiKey | TRANS NPN 50V 0.1A SOT-723 Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
40387 In Stock |
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$0.0175 / $0.1700 | Buy Now |
DISTI #
2SC5658M3T5G
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Avnet Americas | Bipolar (BJT) Single Transistor, NPN, 50 V, 150 mA, 260 mW, SOT-723, Surface Mount - Tape and Reel (Alt: 2SC5658M3T5G) RoHS: Compliant Min Qty: 62500 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 0 |
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$0.0100 / $0.0107 | Buy Now |
DISTI #
2SC5658M3T5G
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Avnet Americas | Bipolar (BJT) Single Transistor, NPN, 50 V, 150 mA, 260 mW, SOT-723, Surface Mount - Tape and Reel (Alt: 2SC5658M3T5G) RoHS: Compliant Min Qty: 8000 Package Multiple: 8000 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
DISTI #
50AC7735
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Avnet Americas | Bipolar (BJT) Single Transistor, NPN, 50 V, 150 mA, 260 mW, SOT-723, Surface Mount - Product that comes on tape, but is not reeled (Alt: 50AC7735) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 24 Weeks, 4 Days Container: Ammo Pack | 0 |
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$0.0500 / $0.1380 | Buy Now |
DISTI #
863-2SC5658M3T5G
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Mouser Electronics | Bipolar Transistors - BJT 100mA 50V NPN RoHS: Compliant | 31670 |
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$0.0210 / $0.1700 | Buy Now |
DISTI #
70465728
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RS | ON Semi 2SC5658M3T5G NPN Bipolar Transistor, 0.15 A, 50 V, 3-Pin SOT-723 Min Qty: 100 Package Multiple: 1 Container: Bulk | 0 |
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$0.0330 / $0.0390 | RFQ |
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Bristol Electronics | Min Qty: 14 | 7505 |
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$0.0562 / $0.3750 | Buy Now |
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Quest Components | 6004 |
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$0.0750 / $0.5000 | Buy Now |
Part Details for 2SC5658M3T5G
2SC5658M3T5G CAD Models
2SC5658M3T5G Part Data Attributes
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2SC5658M3T5G
onsemi
Buy Now
Datasheet
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Compare Parts:
2SC5658M3T5G
onsemi
NPN Bipolar Transistor, SOT-723 3 LEAD, 8000-REEL
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | SOT-723 3 LEAD | |
Package Description | SOT-723, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | 631AA | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 2 Days | |
Samacsys Manufacturer | onsemi | |
Collector Current-Max (IC) | 0.15 A | |
Collector-Base Capacitance-Max | 2 pF | |
Collector-Emitter Voltage-Max | 50 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 120 | |
JESD-30 Code | R-PDSO-F3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 0.26 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 180 MHz | |
VCEsat-Max | 0.4 V |
Alternate Parts for 2SC5658M3T5G
This table gives cross-reference parts and alternative options found for 2SC5658M3T5G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SC5658M3T5G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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2SC4155-T13-1Q | Mitsubishi Electric | Check for Price | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SC-62, 3 PIN | 2SC5658M3T5G vs 2SC4155-T13-1Q |
2SC5658K3T5G | onsemi | Check for Price | 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, CASE 631AA-01, 3 PIN | 2SC5658M3T5G vs 2SC5658K3T5G |
2SC4266-11-Q | Mitsubishi Electric | Check for Price | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | 2SC5658M3T5G vs 2SC4266-11-Q |
2SC4155-11-1Q | Mitsubishi Electric | Check for Price | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SC-70, SUPERMINI-3 | 2SC5658M3T5G vs 2SC4155-11-1Q |
2SC4155-T11-1Q | Mitsubishi Electric | Check for Price | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SC-70, SUPERMINI-3 | 2SC5658M3T5G vs 2SC4155-T11-1Q |
2SC4266 | Mitsubishi Electric | Check for Price | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | 2SC5658M3T5G vs 2SC4266 |
2SC3928-T12-1Q | Mitsubishi Electric | Check for Price | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 | 2SC5658M3T5G vs 2SC3928-T12-1Q |
2SC5398 | Mitsubishi Electric | Check for Price | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | 2SC5658M3T5G vs 2SC5398 |
2SC4266-T11-Q | Mitsubishi Electric | Check for Price | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | 2SC5658M3T5G vs 2SC4266-T11-Q |
2SC5658M3T5G Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the 2SC5658M3T5G is a standard SOT-223 package with a minimum pad size of 1.5mm x 1.5mm and a thermal pad size of 2.5mm x 2.5mm.
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To ensure reliable operation in high-temperature environments, ensure that the device is properly heatsinked, and the junction temperature (Tj) is kept below the maximum rating of 150°C. Also, consider derating the device's power handling capabilities according to the temperature derating curve provided in the datasheet.
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Store the 2SC5658M3T5G in a dry, cool place away from direct sunlight. Handle the device by the body, avoiding touching the leads or die. Use anti-static precautions when handling the device to prevent electrostatic discharge (ESD) damage.
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Yes, the 2SC5658M3T5G can be used in switching applications, but ensure that the device is properly biased and that the switching frequency is within the recommended range. Also, consider the device's switching characteristics, such as rise and fall times, and ensure that the application's requirements are met.
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The optimal base resistor value for the 2SC5658M3T5G depends on the specific application and the required current gain. A general rule of thumb is to choose a base resistor value that provides a base current of around 1/10th of the collector current. Consult the datasheet and application notes for more information.