| Manufacturer | Description | Price Range | Set Alert | Details |
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| Galaxy Microelectronics | Medium Power NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 150V; IC (A): 1.5A; HFE Min: 40; HFE Max: 140; VCE (V): 10V; IC (mA): 500mA; VCE(SAT) (V): 1.5V; IC (mA)1: 500mA; IB (mA): 50mA; FT Min (MHz): 4+ MHz; PTM Max (W): 1.5W; Package: TO-220AB; package_code: TO-220AB; mfr_package_code: TO-220AB |
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| Mospec Semiconductor Corp | Transistor |
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| Transys Electronics Limited | Transistor |
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| Toshiba America Electronic Components | TRANSISTOR 1.5 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220AB, BIP General Purpose Power |
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| Continental Device India Ltd | Power Bipolar Transistor, 1.5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN |
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| Yangzhou Yangjie Electronics Co Ltd | Transistor |
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| Usha Ltd | Transistor |
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| Galaxy Semi-Conductor Co Ltd | Power Bipolar Transistor, |
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| Inchange Semiconductor Company Ltd | Transistor |
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| Jiangsu Changjiang Electronics Technology Co Ltd | Transistor |
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