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Part Details for 2N7002KW-AU_R1_000A1 by PanJit Semiconductor
Results Overview of 2N7002KW-AU_R1_000A1 by PanJit Semiconductor
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
2N7002KW-AU_R1_000A1 Information
2N7002KW-AU_R1_000A1 by PanJit Semiconductor is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| ADS1000A1QDBVRQ1 | Texas Instruments | Automotive, 12-Bit, 128SPS, 1-Ch Delta-Sigma ADC w/ PGA, Oscillator & I<sup>2</sup>C 6-SOT-23 -40 to 125 | |
| ADS1000A1IDBVR | Texas Instruments | 12-Bit, 128SPS, 1-Ch Delta-Sigma ADC w/ PGA, Oscillator & I<sup>2</sup>C 6-SOT-23 -40 to 125 | |
| ADS1000A1IDBVTG4 | Texas Instruments | 12-Bit, 128SPS, 1-Ch Delta-Sigma ADC w/ PGA, Oscillator & I<sup>2</sup>C 6-SOT-23 -40 to 125 |
Price & Stock for 2N7002KW-AU_R1_000A1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
241-2N7002KWAUR1000A
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Mouser Electronics | MOSFETs 60V N-Channel Enhancement Mode MOSFET - ESD Protected RoHS: Compliant | 8638 |
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$0.0250 / $0.2200 | Buy Now |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.25A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 42 |
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$0.0720 | Buy Now |
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DISTI #
2N7002KW-AU-R1
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TME | Transistor: N-MOSFET, unipolar, 60V, 250mA, Idm: 1A, 350mW, SOT323 Min Qty: 1 | 549 |
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$0.0220 / $0.1364 | Buy Now |
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NAC | 60V N-Channel Enhancement Mode MOSFET - ESD Protected RoHS: Compliant Min Qty: 30000 Package Multiple: 3000 Container: Reel | 0 |
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$0.0160 / $0.0190 | Buy Now |
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DISTI #
2N7002KW-AU_R1_000A1
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Avnet Silica | (Alt: 2N7002KW-AU_R1_000A1) RoHS: Compliant Min Qty: 30000 Package Multiple: 3000 Lead time: 27 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for 2N7002KW-AU_R1_000A1
2N7002KW-AU_R1_000A1 CAD Models
2N7002KW-AU_R1_000A1 Part Data Attributes
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2N7002KW-AU_R1_000A1
PanJit Semiconductor
Buy Now
Datasheet
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Compare Parts:
2N7002KW-AU_R1_000A1
PanJit Semiconductor
Small Signal Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | PANJIT INTERNATIONAL INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | PANJIT | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.25 A | |
| Drain-source On Resistance-Max | 3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
2N7002KW-AU_R1_000A1 Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the 2N7002KW-AU_R1_000A1 is -55°C to 150°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade if operated outside the recommended temperature range.
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To ensure proper biasing, follow the recommended voltage and current ratings specified in the datasheet. Typically, the gate-source voltage (Vgs) should be between 2V to 4V, and the drain-source voltage (Vds) should be within the recommended range. Additionally, ensure the device is operated within the specified current ratings to prevent overheating and damage.
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The 2N7002KW-AU_R1_000A1 has a high power dissipation capability, but it still requires proper thermal management to prevent overheating. Ensure good thermal conductivity between the device and the PCB, use thermal vias, and consider using a heat sink or thermal pad to dissipate heat efficiently.
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Yes, the 2N7002KW-AU_R1_000A1 is suitable for high-frequency switching applications due to its low gate charge and fast switching times. However, ensure that the device is properly biased and that the PCB layout is optimized for high-frequency operation to minimize parasitic inductance and capacitance.
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The 2N7002KW-AU_R1_000A1 has built-in ESD protection, but it's still essential to follow proper ESD handling procedures during assembly and testing. Use ESD-safe materials, handle the devices by the body or with an ESD strap, and ensure that the PCB design includes ESD protection components, such as TVS diodes or ESD arrays.