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Small Signal Field-Effect Transistor,
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2N7002K-AU_R1_000A2 by PanJit Semiconductor is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
241-2N7002KAUR1000A2
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Mouser Electronics | MOSFETs 60V N-Channel Enhancement Mode MOSFET - ESD Protected RoHS: Compliant | 21350 |
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$0.0220 / $0.1800 | Buy Now |
DISTI #
2N7002K-AU-R1
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TME | Transistor: N-MOSFET, unipolar, 60V, 300mA, Idm: 2A, 500mW, SOT23 Min Qty: 1 | 180 |
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$0.0217 / $0.1091 | Buy Now |
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NAC | 60V N-Channel Enhancement Mode MOSFET - ESD Protected RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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$0.0120 / $0.0140 | Buy Now |
DISTI #
2N7002K-AU_R1_000A2
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Avnet Asia | Transistor MOSFET N-CH 60V 300mA 3-Pin SOT-23 T/R (Alt: 2N7002K-AU_R1_000A2) RoHS: Compliant Min Qty: 30000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days | 0 |
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RFQ | |
DISTI #
2N7002K-AU_R1_000A2
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Avnet Silica | Transistor MOSFET NCH 60V 300mA 3Pin SOT23 TR (Alt: 2N7002K-AU_R1_000A2) RoHS: Compliant Min Qty: 9000 Package Multiple: 3000 Lead time: 27 Weeks, 0 Days | Silica - 48000 |
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Buy Now |
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2N7002K-AU_R1_000A2
PanJit Semiconductor
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Datasheet
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2N7002K-AU_R1_000A2
PanJit Semiconductor
Small Signal Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | PANJIT INTERNATIONAL INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 2018-10-01 | |
Samacsys Manufacturer | PANJIT | |
Additional Feature | ULTRA LOW RESISTANCE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.3 A | |
Drain-source On Resistance-Max | 3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The maximum operating temperature range for the 2N7002K-AU_R1_000A2 is -55°C to 150°C.
Yes, the 2N7002K-AU_R1_000A2 is suitable for high-frequency switching applications due to its low gate charge and low output capacitance.
The maximum current rating for the 2N7002K-AU_R1_000A2 is 1.5A.
The 2N7002K-AU_R1_000A2 is a logic-level MOSFET, which means it can be driven directly by a microcontroller or other low-voltage logic device.
The typical turn-on and turn-off time for the 2N7002K-AU_R1_000A2 is around 10-20ns.