| International Rectifier |
Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, |
$11.5900
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| Harris Semiconductor |
Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF |
$8.4094 / $19.5000
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| Vishay Siliconix |
Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205, |
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| HARTING Technology Group |
Electronic Component |
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| Freescale Semiconductor |
TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,3.5A I(D),TO-39 |
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| Intersil Corporation |
3.5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
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| Rochester Electronics LLC |
3.5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
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| Motorola Mobility LLC |
3.5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 |
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| Thomson Consumer Electronics |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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| TT Electronics Power and Hybrid / Semelab Limited |
3.5A, 200V, 0.92ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN |
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| Unitrode Corporation |
Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, |
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| Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, |
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| TT Electronics Resistors |
Power Field-Effect Transistor, 3.5A I(D), 200V, 0.92ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN |
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| Motorola Semiconductor Products |
Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 |
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| Microsemi Corporation |
Power Field-Effect Transistor, 3.5A I(D), 200V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, FORMERLY TO-39, 3 PIN |
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| Infineon Technologies AG |
Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, |
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