| International Rectifier |
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, |
$0.5250 / $0.8468
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| TT Electronics Resistors |
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN |
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| Intersil Corporation |
2.25A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
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| Harris Semiconductor |
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF |
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| Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, |
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| Freescale Semiconductor |
TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,2.25A I(D),TO-39 |
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| Infineon Technologies AG |
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, |
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| Microsemi Corporation |
Power Field-Effect Transistor, 2.25A I(D), 200V, 2.81ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN |
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| Motorola Semiconductor Products |
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 |
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| Thomson Consumer Electronics |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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| New Jersey Semiconductor Products Inc |
Trans MOSFET N-CH 200V 2.25A 3-Pin TO-39 |
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| Motorola Mobility LLC |
2.25A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 |
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| Unitrode Corporation |
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, |
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| TT Electronics Power and Hybrid / Semelab Limited |
2.25A, 200V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN |
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