Part Details for 2N6426/D75Z-J14Z by Texas Instruments
Results Overview of 2N6426/D75Z-J14Z by Texas Instruments
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
2N6426/D75Z-J14Z Information
2N6426/D75Z-J14Z by Texas Instruments is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for 2N6426/D75Z-J14Z
2N6426/D75Z-J14Z CAD Models
2N6426/D75Z-J14Z Part Data Attributes
|
|
2N6426/D75Z-J14Z
Texas Instruments
Buy Now
Datasheet
|
Compare Parts:
2N6426/D75Z-J14Z
Texas Instruments
40V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3
|
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NATIONAL SEMICONDUCTOR CORP | |
| Package Description | CYLINDRICAL, O-PBCY-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Collector-Base Capacitance-Max | 7 pF | |
| Collector-Emitter Voltage-Max | 40 V | |
| Configuration | DARLINGTON | |
| DC Current Gain-Min (hFE) | 20000 | |
| JESD-30 Code | O-PBCY-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | NPN | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | BOTTOM | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 150 MHz | |
| VCEsat-Max | 1.5 V |