Part Details for 2N6039TIN/LEAD by Central Semiconductor Corp
Results Overview of 2N6039TIN/LEAD by Central Semiconductor Corp
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- Reference Designs: (Not Available)
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2N6039TIN/LEAD Information
2N6039TIN/LEAD by Central Semiconductor Corp is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
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DE6B3KJ151KB4BE01J | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive | |
DE6B3KJ471KN4AE01J | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive | |
DE6E3KJ222MA4B | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive |
Part Details for 2N6039TIN/LEAD
2N6039TIN/LEAD CAD Models
2N6039TIN/LEAD Part Data Attributes
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2N6039TIN/LEAD
Central Semiconductor Corp
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Datasheet
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2N6039TIN/LEAD
Central Semiconductor Corp
Power Bipolar Transistor,
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | CENTRAL SEMICONDUCTOR CORP | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 2018-01-30 | |
Collector Current-Max (IC) | 4 A | |
Collector-Emitter Voltage-Max | 80 V | |
Configuration | DARLINGTON | |
DC Current Gain-Min (hFE) | 100 | |
JEDEC-95 Code | TO-126 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | NPN | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 25 MHz |