Part Details for 2N5555RL by Motorola Mobility LLC
Results Overview of 2N5555RL by Motorola Mobility LLC
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- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
2N5555RL Information
2N5555RL by Motorola Mobility LLC is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for 2N5555RL
2N5555RL CAD Models
2N5555RL Part Data Attributes
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2N5555RL
Motorola Mobility LLC
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Datasheet
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2N5555RL
Motorola Mobility LLC
25V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MOTOROLA INC | |
| Package Description | CYLINDRICAL, O-PBCY-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Additional Feature | EUROPEAN PART NUMBER | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain-source On Resistance-Max | 150 Ω | |
| FET Technology | JUNCTION | |
| Feedback Cap-Max (Crss) | 1.2 pF | |
| JEDEC-95 Code | TO-92 | |
| JESD-30 Code | O-PBCY-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 0.35 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |