Part Details for 2N5323 by General Diode Corp
Results Overview of 2N5323 by General Diode Corp
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
2N5323 Information
2N5323 by General Diode Corp is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for 2N5323
2N5323 CAD Models
2N5323 Part Data Attributes
|
2N5323
General Diode Corp
Buy Now
Datasheet
|
Compare Parts:
2N5323
General Diode Corp
Power Bipolar Transistor, 2A I(C), 75V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN
|
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | GENERAL DIODE CORP | |
Part Package Code | TO-5 | |
Package Description | TO-5, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Collector Current-Max (IC) | 2 A | |
Collector-Emitter Voltage-Max | 75 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 30 | |
JEDEC-95 Code | TO-5 | |
JESD-30 Code | O-MBCY-W3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 10 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 50 MHz |