Datasheets
2N5038G by:

NPN Bipolar Power Transistor, TO-204 (TO-3), 100-FTRAY

Part Details for 2N5038G by onsemi

Results Overview of 2N5038G by onsemi

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2N5038G Information

2N5038G by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for 2N5038G

Part # Distributor Description Stock Price Buy
DISTI # 82Y7707
Newark Transistor, Bipol, Npn, 90V, To-204-2, Transistor Polarity:Npn, Collector Emitter Voltage V(Br)Ceo:90V, Transition Frequency Ft:-, Power Dissipation Pd:140W, Dc Collector Current:20A, Dc Current Gain Hfe:20Hfe, Transistor Case Rohs Compliant: Yes |Onsemi 2N5038G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 32
  • 1 $12.0700
  • 10 $8.0400
  • 25 $8.0000
  • 50 $7.9600
  • 100 $7.0700
  • 300 $6.8400
$6.8400 / $12.0700 Buy Now
DISTI # 2N5038GOS-ND
DigiKey TRANS NPN 90V 20A TO204 Min Qty: 1 Lead time: 10 Weeks Container: Tray 81
In Stock
  • 1 $11.7400
  • 10 $8.1550
$8.1550 / $11.7400 Buy Now
DISTI # 2N5038G
Avnet Americas Transistor GP BJT NPN 90V 20A 2-Pin TO-3 Tray - Trays (Alt: 2N5038G) RoHS: Compliant Min Qty: 200 Package Multiple: 100 Lead time: 111 Weeks, 0 Days Container: Tray 0
RFQ
DISTI # 863-2N5038G
Mouser Electronics Bipolar Transistors - BJT 20A 90V 140W NPN RoHS: Compliant 450
  • 1 $11.6700
  • 10 $7.6500
  • 200 $7.2600
  • 500 $6.5200
$6.5200 / $11.6700 Buy Now
DISTI # V79:2366_26241149
Arrow Electronics Trans GP BJT NPN 90V 20A 140000mW 3-Pin(2+Tab) TO-3 Tray Min Qty: 100 Package Multiple: 100 Date Code: 1834 Americas - 1
  • 100 $4.7770
$4.7770 Buy Now
DISTI # 85954252
Verical Trans GP BJT NPN 90V 20A 140000mW 3-Pin(2+Tab) TO-3 Tray Min Qty: 51 Package Multiple: 1 Date Code: 0701 Americas - 533
  • 51 $7.4500
  • 100 $7.0750
  • 500 $6.7000
  • 1,000 $6.3375
  • 10,000 $5.9625
$5.9625 / $7.4500 Buy Now
DISTI # 85955346
Verical Trans GP BJT NPN 90V 20A 140000mW 3-Pin(2+Tab) TO-3 Tray Min Qty: 51 Package Multiple: 1 Date Code: 1101 Americas - 300
  • 51 $7.4500
  • 100 $7.0750
  • 500 $6.7000
  • 1,000 $6.3375
  • 10,000 $5.9625
$5.9625 / $7.4500 Buy Now
Rochester Electronics 2N5038 - Power Bipolar Transistor, 20A, 90V, NPN, TO-204AA, Metal, 2 Pin RoHS: Not Compliant Status: Active Min Qty: 1 909
  • 25 $5.9600
  • 100 $5.6600
  • 500 $5.3600
  • 1,000 $5.0700
  • 10,000 $4.7700
$4.7700 / $5.9600 Buy Now
DISTI # 2N5038G
Avnet Asia Transistor GP BJT NPN 90V 20A 2-Pin TO-3 Tray (Alt: 2N5038G) RoHS: Compliant Min Qty: 200 Package Multiple: 100 0
RFQ
DISTI # 2N5038G
Avnet Silica Transistor GP BJT NPN 90V 20A 2Pin TO3 Tray (Alt: 2N5038G) RoHS: Compliant Min Qty: 200 Package Multiple: 100 Lead time: 11 Weeks, 0 Days Silica - 0
Buy Now
DISTI # 2N5038G
EBV Elektronik Transistor GP BJT NPN 90V 20A 2Pin TO3 Tray (Alt: 2N5038G) RoHS: Compliant Min Qty: 100 Package Multiple: 100 Lead time: 11 Weeks, 0 Days EBV - 0
Buy Now
Flip Electronics Stock, ship today 136
RFQ

Part Details for 2N5038G

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2N5038G Part Data Attributes

2N5038G onsemi
Buy Now Datasheet
Compare Parts:
2N5038G onsemi NPN Bipolar Power Transistor, TO-204 (TO-3), 100-FTRAY
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Part Package Code TO-204 (TO-3)
Package Description LEAD FREE, CASE-1-07, TO-3, 2 PIN
Pin Count 2
Manufacturer Package Code 1-07
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 111 Weeks
Samacsys Manufacturer onsemi
Case Connection COLLECTOR
Collector Current-Max (IC) 20 A
Collector-Emitter Voltage-Max 90 V
Configuration SINGLE
DC Current Gain-Min (hFE) 20
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2
JESD-609 Code e1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 200 °C
Operating Temperature-Min -65 °C
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 140 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 60 MHz

Alternate Parts for 2N5038G

This table gives cross-reference parts and alternative options found for 2N5038G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N5038G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
2N5038 Mospec Semiconductor Corp Check for Price Power Bipolar Transistor, 20A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN 2N5038G vs 2N5038
2N5038 Spectrum Control Check for Price Power Bipolar Transistor, 20A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, 2N5038G vs 2N5038

2N5038G Related Parts

2N5038G Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the 2N5038G is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal resistance, maximum junction temperature, and voltage and current ratings. A safe operating area analysis should be performed to ensure the device operates within its thermal and electrical limits.

  • To ensure the 2N5038G is properly biased for linear operation, the base-emitter voltage (VBE) should be set to around 0.7V, and the collector-emitter voltage (VCE) should be set to a value that allows the transistor to operate in the active region. The base current should be limited to prevent saturation, and the collector current should be limited to prevent overheating.

  • The recommended PCB layout for the 2N5038G involves placing the transistor close to the heat sink, using a thermal relief pattern to reduce thermal resistance, and ensuring good copper pour coverage around the device. Thermal management involves using a heat sink with a thermal resistance of around 1°C/W or lower, and applying a thermal interface material (TIM) to reduce the thermal resistance between the device and heat sink.

  • To protect the 2N5038G from electrostatic discharge (ESD), it is recommended to handle the device with anti-static wrist straps, mats, or bags, and to use ESD-protected workstations and tools. The device should also be stored in anti-static packaging, and ESD protection devices such as TVS diodes or ESD protection arrays can be used in the circuit design.

  • The recommended storage and handling procedure for the 2N5038G involves storing the device in its original packaging or in an anti-static bag, away from direct sunlight and moisture. The device should be handled with clean, dry gloves, and should not be exposed to temperatures above 150°C or below -40°C.

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