Part Details for 24LC512T-I/SMG by Microchip Technology Inc
Results Overview of 24LC512T-I/SMG by Microchip Technology Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
24LC512T-I/SMG Information
24LC512T-I/SMG by Microchip Technology Inc is an EEPROM.
EEPROMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for 24LC512T-I/SMG
Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Memory ICs | 947 |
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RFQ |
Part Details for 24LC512T-I/SMG
24LC512T-I/SMG CAD Models
24LC512T-I/SMG Part Data Attributes
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24LC512T-I/SMG
Microchip Technology Inc
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Datasheet
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24LC512T-I/SMG
Microchip Technology Inc
64K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 5.28 MM, PLASTIC, ROHS COMPLIANT, EIAJ, SOIJ-8
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
Part Package Code | SOIC | |
Package Description | 5.28 MM, PLASTIC, ROHS COMPLIANT, EIAJ, SOIJ-8 | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.51 | |
Samacsys Manufacturer | Microchip | |
Clock Frequency-Max (fCLK) | 0.4 MHz | |
Data Retention Time-Min | 200 | |
Endurance | 1000000 Write/Erase Cycles | |
I2C Control Byte | 1010DDDR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Length | 5.245 mm | |
Memory Density | 524288 bit | |
Memory IC Type | EEPROM | |
Memory Width | 8 | |
Moisture Sensitivity Level | 1 | |
Number of Functions | 1 | |
Number of Terminals | 8 | |
Number of Words | 65536 words | |
Number of Words Code | 64000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 64KX8 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | SOP | |
Package Equivalence Code | SOP8,.3 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Parallel/Serial | SERIAL | |
Peak Reflow Temperature (Cel) | 260 | |
Qualification Status | Not Qualified | |
Seated Height-Max | 2.03 mm | |
Serial Bus Type | I2C | |
Standby Current-Max | 0.000001 A | |
Supply Current-Max | 0.003 mA | |
Supply Voltage-Max (Vsup) | 5.5 V | |
Supply Voltage-Min (Vsup) | 2.5 V | |
Supply Voltage-Nom (Vsup) | 4.5 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Pitch | 1.27 mm | |
Terminal Position | DUAL | |
Width | 5.23 mm | |
Write Cycle Time-Max (tWC) | 5 ms | |
Write Protection | HARDWARE |
Alternate Parts for 24LC512T-I/SMG
This table gives cross-reference parts and alternative options found for 24LC512T-I/SMG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 24LC512T-I/SMG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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24LC512T-I/SM | Microchip Technology Inc | $1.5624 | 64K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 5.28 MM, PLASTIC, ROHS COMPLIANT, EIAJ, SOIJ-8 | 24LC512T-I/SMG vs 24LC512T-I/SM |
24LC512-I/SMG | Microchip Technology Inc | $1.7258 | 64K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 5.28 MM, PLASTIC, ROHS COMPLIANT, EIAJ, SOIJ-8 | 24LC512T-I/SMG vs 24LC512-I/SMG |
24LC512-I/SM | Microchip Technology Inc | $1.7781 | 64K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 5.28 MM, PLASTIC, ROHS COMPLIANT, EIAJ, SOIJ-8 | 24LC512T-I/SMG vs 24LC512-I/SM |
24LC512T-E/SM | Microchip Technology Inc | $2.0700 | 64K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 5.28 MM, PLASTIC, ROHS COMPLIANT, EIAJ, SOIJ-8 | 24LC512T-I/SMG vs 24LC512T-E/SM |
24LC512-E/SMG | Microchip Technology Inc | Check for Price | 64K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 5.28 MM, PLASTIC, ROHS COMPLIANT, EIAJ, SOIJ-8 | 24LC512T-I/SMG vs 24LC512-E/SMG |
24LC512T-E/SMG | Microchip Technology Inc | Check for Price | 64K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 5.28 MM, PLASTIC, ROHS COMPLIANT, EIAJ, SOIJ-8 | 24LC512T-I/SMG vs 24LC512T-E/SMG |
24LC512-ET/SM | Microchip Technology Inc | Check for Price | 64K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.208 INCH, ROHS COMPLIANT, SOIC-8 | 24LC512T-I/SMG vs 24LC512-ET/SM |
24LC512T-I/SMG Frequently Asked Questions (FAQ)
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The 24LC512T-I/SMG has a minimum of 1 million write cycles, but this can vary depending on the operating conditions and usage patterns.
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To ensure data integrity, use the WP (Write Protect) pin to prevent accidental writes during power-down or power-up. Additionally, use a voltage supervisor or a power-on reset circuit to ensure the device is fully powered before accessing the EEPROM.
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The recommended clock frequency for the 24LC512T-I/SMG is up to 1 MHz, but it can operate at frequencies up to 3.4 MHz. However, higher frequencies may require additional capacitive loading and may affect device reliability.
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The 24LC512T-I/SMG uses a page-write architecture, where data is written in 128-byte pages. For block writes, use the Page Write command (0x02) and specify the starting address and number of bytes to write. Ensure that the device is in the correct state (e.g., not in a write cycle) before initiating a write operation.
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The WP pin is used to prevent accidental writes to the EEPROM. When the WP pin is tied low, the device is in write-protect mode, and all write operations are inhibited. To use the WP pin, connect it to VCC or GND depending on the desired write protection state.