Part Details for 1N6642 by Microsemi Corporation
Results Overview of 1N6642 by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Healthcare
Medical Imaging
1N6642 Information
1N6642 by Microsemi Corporation is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.
A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.
Part Details for 1N6642
1N6642 CAD Models
1N6642 Part Data Attributes
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1N6642
Microsemi Corporation
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Datasheet
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1N6642
Microsemi Corporation
Rectifier Diode, 1 Element, 0.3A, 75V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Part Package Code | DO-35 | |
| Package Description | HERMETIC SEALED, GLASS PACKAGE-2 | |
| Pin Count | 2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.70 | |
| Samacsys Manufacturer | Microsemi Corporation | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE | |
| Diode Element Material | SILICON | |
| Diode Type | RECTIFIER DIODE | |
| JESD-30 Code | O-LALF-W2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Phases | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -65 °C | |
| Output Current-Max | 0.3 A | |
| Package Body Material | GLASS | |
| Package Shape | ROUND | |
| Package Style | LONG FORM | |
| Rep Pk Reverse Voltage-Max | 75 V | |
| Reverse Recovery Time-Max | 0.005 µs | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | WIRE | |
| Terminal Position | AXIAL |
Alternate Parts for 1N6642
This table gives cross-reference parts and alternative options found for 1N6642. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1N6642, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| 1N6642E3 | Microsemi Corporation | Check for Price | Rectifier Diode, 1 Element, 0.3A, 75V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 | 1N6642 vs 1N6642E3 |
1N6642 Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the 1N6642 is -55°C to 150°C, although it can withstand storage temperatures from -65°C to 200°C.
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To ensure proper biasing, the 1N6642 requires a minimum voltage of 10V to 12V on the anode (pin 1) with respect to the cathode (pin 2), and a maximum current of 100mA.
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The maximum power dissipation of the 1N6642 is 500mW, and it is essential to ensure that the device does not exceed this rating to prevent overheating and damage.
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Yes, the 1N6642 is suitable for high-frequency applications up to 1GHz, but it's essential to consider the device's parasitic capacitance and inductance when designing the circuit.
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To prevent electrostatic discharge (ESD) damage, it's recommended to use ESD protection devices, such as diodes or resistors, in series with the 1N6642, and to handle the device with ESD-safe equipment and materials.