Part Details for 1N5822US by Microsemi Corporation
Results Overview of 1N5822US by Microsemi Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
1N5822US Information
1N5822US by Microsemi Corporation is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.
A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.
Price & Stock for 1N5822US
| Part # | Distributor | Description | Stock | Price | Buy | |
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NexGen Digital | 3 |
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RFQ |
Part Details for 1N5822US
1N5822US CAD Models
1N5822US Part Data Attributes
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1N5822US
Microsemi Corporation
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Datasheet
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1N5822US
Microsemi Corporation
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, HERMETIC SEALED, D5B, 2 PIN
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Package Description | HERMETIC SEALED, D5B, 2 PIN | |
| Pin Count | 2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.80 | |
| Samacsys Manufacturer | Microsemi Corporation | |
| Additional Feature | METALLURGICALLY BONDED | |
| Application | GENERAL PURPOSE | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE | |
| Diode Element Material | SILICON | |
| Diode Type | RECTIFIER DIODE | |
| Forward Voltage-Max (VF) | 0.4 V | |
| JESD-30 Code | O-LELF-R2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Phases | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 125 °C | |
| Output Current-Max | 3 A | |
| Package Body Material | GLASS | |
| Package Shape | ROUND | |
| Package Style | LONG FORM | |
| Qualification Status | Not Qualified | |
| Rep Pk Reverse Voltage-Max | 40 V | |
| Surface Mount | YES | |
| Technology | SCHOTTKY | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | WRAP AROUND | |
| Terminal Position | END |
Alternate Parts for 1N5822US
This table gives cross-reference parts and alternative options found for 1N5822US. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1N5822US, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| JANS1N5822US | Compensated Devices Inc | Check for Price | Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, Silicon, | 1N5822US vs JANS1N5822US |
1N5822US Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the 1N5822US is -65°C to 175°C.
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Yes, the 1N5822US is designed for high-reliability applications, including aerospace, defense, and industrial uses.
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The typical reverse recovery time for the 1N5822US is 50 ns.
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Yes, the 1N5822US is suitable for use in switching power supplies due to its low forward voltage drop and high current handling capability.
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Yes, the 1N5822US is a radiation-hardened device, making it suitable for use in space and other high-radiation environments.