Part Details for 1N5811E3 by Microsemi Corporation
Results Overview of 1N5811E3 by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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1N5811E3 Information
1N5811E3 by Microsemi Corporation is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.
A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.
Part Details for 1N5811E3
1N5811E3 CAD Models
1N5811E3 Part Data Attributes
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1N5811E3
Microsemi Corporation
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Datasheet
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1N5811E3
Microsemi Corporation
Rectifier Diode, 1 Phase, 1 Element, 6A, Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS, E, 2 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Package Description | ROHS COMPLIANT, HERMETIC SEALED, GLASS, E, 2 PIN | |
| Pin Count | 2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.80 | |
| Samacsys Manufacturer | Microsemi Corporation | |
| Additional Feature | HIGH RELIABILITY | |
| Application | ULTRA FAST RECOVERY | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE | |
| Diode Element Material | SILICON | |
| Diode Type | RECTIFIER DIODE | |
| JESD-30 Code | O-GALF-W2 | |
| JESD-609 Code | e3 | |
| Non-rep Pk Forward Current-Max | 125 A | |
| Number of Elements | 1 | |
| Number of Phases | 1 | |
| Number of Terminals | 2 | |
| Output Current-Max | 6 A | |
| Package Body Material | CERAMIC, GLASS-SEALED | |
| Package Shape | ROUND | |
| Package Style | LONG FORM | |
| Qualification Status | Not Qualified | |
| Reverse Recovery Time-Max | 0.03 µs | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | WIRE | |
| Terminal Position | AXIAL |
Alternate Parts for 1N5811E3
This table gives cross-reference parts and alternative options found for 1N5811E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1N5811E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| JAN1N5811 | General Instrument Corp | Check for Price | Rectifier Diode, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, | 1N5811E3 vs JAN1N5811 |
| 1N5811 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 3A, 150V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, D2A, 2 PIN | 1N5811E3 vs 1N5811 |
1N5811E3 Frequently Asked Questions (FAQ)
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The recommended footprint and land pattern for the 1N5811E3 can be found in the Microsemi Corporation's packaging and assembly guidelines document, which provides detailed information on the recommended pad layout, solder mask, and stencil design.
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To ensure proper soldering and avoid defects, follow the recommended soldering profile and guidelines provided in the Microsemi Corporation's soldering and assembly guidelines document. Additionally, use a solder with a melting point compatible with the diode's temperature rating, and avoid excessive soldering temperatures and times.
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The 1N5811E3 is a sensitive device and requires proper ESD protection and handling precautions. Handle the device with anti-static wrist straps, mats, and packaging materials, and avoid touching the device's pins or leads. Follow the recommended ESD handling and protection guidelines provided in the Microsemi Corporation's ESD protection and handling guidelines document.
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Yes, the 1N5811E3 is a high-reliability device that meets the requirements of various aerospace and defense standards, including MIL-PRF-19500 and NASA's EEE-INST-002. However, it's essential to consult with Microsemi Corporation's application engineers and review the device's qualification and testing data to ensure it meets the specific requirements of your application.
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The 1N5811E3 has a high power dissipation rating, and proper thermal management is crucial to ensure reliable operation. Ensure good thermal conductivity between the device and the PCB, use thermal vias and heat sinks as needed, and follow the recommended thermal management guidelines provided in the Microsemi Corporation's thermal management application note.