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Part Details for 1N5806USE3 by Microsemi Corporation
Results Overview of 1N5806USE3 by Microsemi Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
1N5806USE3 Information
1N5806USE3 by Microsemi Corporation is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.
A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.
Price & Stock for 1N5806USE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
1N5806USE3
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Richardson RFPD | RECTIFIER MODULE - FAST RECOVERY/FRED RoHS: Compliant Min Qty: 148 | 0 |
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$5.7700 / $5.9200 | Buy Now |
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Vyrian | Diodes | 258 |
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RFQ |
Part Details for 1N5806USE3
1N5806USE3 CAD Models
1N5806USE3 Part Data Attributes
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1N5806USE3
Microsemi Corporation
Buy Now
Datasheet
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Compare Parts:
1N5806USE3
Microsemi Corporation
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1A, 150V V(RRM), Silicon, HERMETIC SEALED, GLASS, D-5A, 2 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Package Description | HERMETIC SEALED, GLASS, D-5A, 2 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.80 | |
| Samacsys Manufacturer | Microsemi Corporation | |
| Additional Feature | HIGH RELIABLITY | |
| Application | ULTRA FAST RECOVERY | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE | |
| Diode Element Material | SILICON | |
| Diode Type | RECTIFIER DIODE | |
| Forward Voltage-Max (VF) | 0.875 V | |
| JESD-30 Code | O-LELF-R2 | |
| JESD-609 Code | e3 | |
| Non-rep Pk Forward Current-Max | 35 A | |
| Number of Elements | 1 | |
| Number of Phases | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -65 °C | |
| Output Current-Max | 1 A | |
| Package Body Material | GLASS | |
| Package Shape | ROUND | |
| Package Style | LONG FORM | |
| Rep Pk Reverse Voltage-Max | 150 V | |
| Reverse Recovery Time-Max | 0.025 µs | |
| Surface Mount | YES | |
| Technology | AVALANCHE | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | WRAP AROUND | |
| Terminal Position | END |
Alternate Parts for 1N5806USE3
This table gives cross-reference parts and alternative options found for 1N5806USE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1N5806USE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| JANTX1N5806US | Semtech Corporation | $16.8883 | Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 | 1N5806USE3 vs JANTX1N5806US |
| JANTX1N5806US | Microchip Technology Inc | Check for Price | Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon | 1N5806USE3 vs JANTX1N5806US |
| JANS1N5806US | VPT Components | Check for Price | Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, | 1N5806USE3 vs JANS1N5806US |
| JANS1N5806US | MACOM | Check for Price | Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, | 1N5806USE3 vs JANS1N5806US |
| 1N5806US | Microsemi Corporation | Check for Price | Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon, | 1N5806USE3 vs 1N5806US |
| JANTXV1N5806US | Semtech Corporation | Check for Price | Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 | 1N5806USE3 vs JANTXV1N5806US |
| 1N5806US | Semtech Corporation | Check for Price | Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 | 1N5806USE3 vs 1N5806US |
| JANTXV1N5806US | Microsemi Corporation | Check for Price | Rectifier Diode, 1 Phase, 1 Element, 2.5A, Silicon, | 1N5806USE3 vs JANTXV1N5806US |
1N5806USE3 Frequently Asked Questions (FAQ)
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The recommended footprint and land pattern for the 1N5806USE3 can be found in the Microsemi Corporation's packaging and assembly guidelines document, which provides detailed information on the recommended pad layout, solder mask, and stencil design.
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To ensure the reliability of the 1N5806USE3 in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet, and to consider the device's thermal resistance, junction temperature, and power dissipation. Additionally, proper thermal management, such as heat sinking and airflow, should be implemented.
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While the 1N5806USE3 is a switching diode, it is not designed for high-frequency applications. The device's switching speed and capacitance may not be suitable for high-frequency applications, and alternative devices may be more suitable. Consult with a Microsemi Corporation application engineer for guidance on selecting the right device for high-frequency applications.
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The 1N5806USE3 is a sensitive device and requires proper ESD protection during handling and assembly. It is recommended to follow standard ESD protection practices, such as using ESD-safe workstations, wrist straps, and packaging materials, and to handle the devices by the body rather than the leads.
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The recommended soldering conditions for the 1N5806USE3 can be found in the Microsemi Corporation's soldering guidelines document, which provides detailed information on the recommended soldering temperature, time, and flux type.