Datasheets
1N5416 by:

Rectifier Diode, 1 Phase, 1 Element, 4.5A, 100V V(RRM), Silicon, HERMETIC SEALED, G4, 2 PIN

Part Details for 1N5416 by Semtech Corporation

Results Overview of 1N5416 by Semtech Corporation

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Applications Consumer Electronics Energy and Power Systems Electronic Manufacturing Renewable Energy Automotive

1N5416 Information

1N5416 by Semtech Corporation is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.

A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.

Price & Stock for 1N5416

Part # Distributor Description Stock Price Buy
DISTI # 1N5416S-ND
DigiKey DIODE STANDARD 100V 4.5A AXIAL Lead time: 13 Weeks Container: Bulk Limited Supply - Call
Buy Now
DISTI # 1N5416
Avnet Americas - Bulk (Alt: 1N5416) RoHS: Not Compliant Min Qty: 250 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Bulk 0
RFQ
NexGen Digital   582
RFQ

Part Details for 1N5416

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1N5416 Part Data Attributes

1N5416 Semtech Corporation
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1N5416 Semtech Corporation Rectifier Diode, 1 Phase, 1 Element, 4.5A, 100V V(RRM), Silicon, HERMETIC SEALED, G4, 2 PIN
Part Life Cycle Code Transferred
Ihs Manufacturer SEMTECH CORP
Package Description HERMETIC SEALED, G4, 2 PIN
Pin Count 2
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.10.00.80
Factory Lead Time 20 Weeks
Samacsys Manufacturer SEMTECH
Application FAST SOFT RECOVERY
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V
JESD-30 Code O-XALF-W2
Non-rep Pk Forward Current-Max 150 A
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Output Current-Max 4.5 A
Package Body Material UNSPECIFIED
Package Shape ROUND
Package Style LONG FORM
Qualification Status Not Qualified
Reference Standard MIL-19500
Rep Pk Reverse Voltage-Max 100 V
Reverse Current-Max 1 µA
Reverse Recovery Time-Max 0.15 µs
Surface Mount NO
Terminal Form WIRE
Terminal Position AXIAL

Alternate Parts for 1N5416

This table gives cross-reference parts and alternative options found for 1N5416. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1N5416, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
JAN1N5416 Micross Components Check for Price Rectifier Diode, 1 Phase, 1 Element, 4.5A, 100V V(RRM), Silicon, HERMETIC SEALED, G4, 2 PIN 1N5416 vs JAN1N5416

1N5416 Related Parts

1N5416 Frequently Asked Questions (FAQ)

  • The recommended mounting pad layout for the 1N5416 is a rectangular pad with a minimum size of 2.5mm x 1.5mm, with a 0.5mm radius corner. This layout ensures proper heat dissipation and reduces thermal resistance.

  • Yes, the 1N5416 can be used in switching power supplies due to its fast switching speed and low reverse recovery time. However, ensure that the diode is properly snubbed to prevent voltage spikes and ringing.

  • To prevent electrostatic discharge (ESD) damage, handle the 1N5416 with ESD-safe materials, wear an ESD strap, and ensure that the work surface is ESD-protected. Avoid touching the diode's pins or leads with bare hands.

  • The maximum allowable voltage derating for the 1N5416 is 10% of the maximum rated voltage (100V) at high temperatures (above 150°C). This ensures that the diode operates within its safe operating area.

  • Yes, the 1N5416 can be used in high-frequency applications up to 1MHz due to its low capacitance (15pF) and fast switching speed (50ns). However, ensure that the diode is properly matched to the circuit's impedance and that parasitic inductance is minimized.

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