Part Details for 1N4448W by Yangzhou Yangjie Electronics Co Ltd
Results Overview of 1N4448W by Yangzhou Yangjie Electronics Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
1N4448W Information
1N4448W by Yangzhou Yangjie Electronics Co Ltd is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.
A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.
Part Details for 1N4448W
1N4448W CAD Models
1N4448W Part Data Attributes
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1N4448W
Yangzhou Yangjie Electronics Co Ltd
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Datasheet
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1N4448W
Yangzhou Yangjie Electronics Co Ltd
Rectifier Diode, 1 Element, 0.25A, 100V V(RRM), Silicon,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | YANGZHOU YANGJIE ELECTRONICS CO LTD | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.70 | |
| Configuration | SINGLE | |
| Diode Element Material | SILICON | |
| Diode Type | RECTIFIER DIODE | |
| JESD-30 Code | R-PDSO-G2 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Phases | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Output Current-Max | 0.25 A | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Power Dissipation-Max | 0.5 W | |
| Rep Pk Reverse Voltage-Max | 100 V | |
| Reverse Recovery Time-Max | 0.004 µs | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL |
Alternate Parts for 1N4448W
This table gives cross-reference parts and alternative options found for 1N4448W. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1N4448W, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| BAS516F2 | Yangzhou Yangjie Electronics Co Ltd | Check for Price | Rectifier Diode, 1 Element, 0.25A, 100V V(RRM), Silicon, | 1N4448W vs BAS516F2 |
| CMPD914TIN/LEAD | Central Semiconductor Corp | Check for Price | Rectifier Diode, | 1N4448W vs CMPD914TIN/LEAD |
| CMPD914PBFREE | Central Semiconductor Corp | Check for Price | Rectifier Diode, | 1N4448W vs CMPD914PBFREE |
| BAS516 | Yangzhou Yangjie Electronics Co Ltd | Check for Price | Rectifier Diode, 1 Element, 0.25A, 100V V(RRM), Silicon, | 1N4448W vs BAS516 |
| BAS316 | Suzhou Good-Ark Electronics Co Ltd | Check for Price | Rectifier Diode, | 1N4448W vs BAS316 |
| CMPD6001PBFREE | Central Semiconductor Corp | Check for Price | Rectifier Diode, | 1N4448W vs CMPD6001PBFREE |
| 1N4448X | Jiangsu Changjiang Electronics Technology Co Ltd | Check for Price | Rectifier Diode, 1 Element, 0.25A, 100V V(RRM), Silicon, PLASTIC PACKAGE-2 | 1N4448W vs 1N4448X |
| BAS316 | Galaxy Semi-Conductor Co Ltd | Check for Price | Rectifier Diode, | 1N4448W vs BAS316 |
| BAS316,235 | NXP Semiconductors | Check for Price | Rectifier Diode, 1 Element, 0.25A, 100V V(RRM), Silicon | 1N4448W vs BAS316,235 |
| 1N4448WF2 | Yangzhou Yangjie Electronics Co Ltd | Check for Price | Rectifier Diode, 1 Element, 0.25A, 100V V(RRM), Silicon, | 1N4448W vs 1N4448WF2 |
1N4448W Frequently Asked Questions (FAQ)
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The recommended storage temperature for 1N4448W diodes is -40°C to 100°C, as specified in the datasheet. However, it's recommended to store them in a dry, cool place, away from direct sunlight and moisture.
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While the 1N4448W diode is suitable for general-purpose switching applications, it's not recommended for high-frequency switching applications (>100 kHz) due to its relatively high reverse recovery time (trr) of 50 ns. For high-frequency applications, consider using a faster diode with a lower trr.
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To prevent electrostatic discharge (ESD) damage, handle 1N4448W diodes with care. Use an ESD wrist strap or mat, and ensure that your workspace is ESD-protected. Avoid touching the diode's pins or leads, and use a vacuum pickup or tweezers to handle the devices.
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The 1N4448W diode has a maximum repetitive peak reverse voltage (Vrrm) of 1000 V. While it can handle high voltages, it's essential to ensure that the diode is used within its specified voltage ratings to prevent damage or failure.
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When soldering the 1N4448W diode, use a soldering iron with a temperature of 250°C to 300°C. Apply a small amount of solder to the pins, and avoid applying excessive heat or force, which can damage the diode.